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2N5320

Part Number	2N5320
Manufacturer	TT
Description	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Published	May 16, 2017
Detailed Description	SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 • Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.5A) • Hermetic TO-39 Metal pac...
Datasheet	2N5320 PDF File

Overview

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 • Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.
5A) • Hermetic TO-39 Metal package.
• Ideally Suited For Medium Power Amplifier And Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 75V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 2A IB Base Current 1.
0A PD Total Power Dissipation at TA = 25°C 1.
0W Derate Above 25°C 5.
71mW/°C PD Total Power Dissipation at TC = 25°C 7W Derate Above 25°C 40mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +20...

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