BDB03

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @1q = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd Tj, T stg Symbol Rwc Rwc Value 45 60 5.0 1.0 1.0 8.0 2.5 20 -55 to +150 Max 50 125 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C Unit °C/W °C/W BDB03 CASE 29-03, STYLE 1 TO-92 (T0-226AE) ONE WATT AMPLIFIER TRANSISTORS NPN SILICON Refer to BDB01 A for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0) V(BR)CES Collector Cutoff Current (V C B = 45 V, El = 0) Emitter Cutoff Current (VEB = 4 V, Ic = 0) ON CHARACTERISTI...