BC636

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" ECB High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD **PD PD Tj, Tstg THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Junction to Ambient Rth (j-c) Rth (j-a) **Rth (j-a) BC635 BC636 45 45 BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 - 55 to +150 BC639 BC640 80 80 45 156 125 UNIT V V V A mW mW/ºC W W mW/ºC ºC ºC/W ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25...