SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
FEATURES ᴌComplementary to BC637.
MAXIMUM RATING (Ta=25ᴱ)
CHARA...
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT
TRANSISTORS.
FEATURES ᴌComplementary to BC637.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC PC Tj
Storage Temperature
Tstg
RATING -60 -60 -5 -500 625 150
-55ᴕ150
UNIT V V V mA
mW ᴱ ᴱ
L M
C
BC638
EPITAXIAL PLANAR
PNP TRANSISTOR
BC
JA
K
E G
D
H FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Input Capacitance
ICBO V(BR)CEO V(BR)CBO V(BR)EBO
hFE VCE(s...
