BC560C

PNP Epitaxial Silicon Transistor BC556, BC557, BC558, BC559, BC560 Features Switching and Amplifier High−Voltage: BC556, VCEO = −65 V Low−Noise: BC559, BC560 Complement to BC546, BC547, BC548, BC549, and BC550 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage VCBO V BC556 −80 BC557 / BC560 −50 BC558 / BC559 −30 Collector - Emitter Voltage VCEO V BC556 −65 BC557 / BC560 −45 BC558 / BC559 −30 Emitter - Base Voltage VEBO −5 V Collector Current (DC) IC −100 mA Peak Collector Current (Pulse) ICP −200 mA Peak Base Current (Pulse) IBP −200 mA Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted) Parameter Symbol Max. Unit Total Device Dissipation Derate above 25°C PD 500 mW 4.0 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 250 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. DATA SHEET www.onsemi.com 123 TO−92−3 CASE 135AN Straight Lead Bulk Packing 1 2 3 1. Collector 2. Base 3. Emitter TO−92−3 CASE 135AR...