BC413B

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC413, B, C BC414, B, C TO-92 Plastic Package CB E ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC VCEO VCBO VEBO IC PD PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC413 30 45 5.0 100 350 2.8 1.0 8.0 - 55 to +150 BC414 45 50 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 125 357 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Base Voltage Emitter Base Voltage Collector Cut Off Current VCBO VEBO ICBO IC=10µA, IE=0 IE=10µA, IC=0 VCB=30V, IE=0 VCB=30V, IE=0, Ta= +125ºC ...