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BC337

SeCoS

NPN Plastic-Encapsulate Transistors

Elektronische Bauelemente BC337 / BC338 NPN Plastic-Encapsulate Transistor FEATURE Power Dissipation CLASSIFICATION O...


SeCoS

BC337

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Elektronische Bauelemente BC337 / BC338 NPN Plastic-Encapsulate Transistor FEATURE Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 Product-Rank BC338-16 Range 100~250 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free G TO-92 H BC337-25 BC338-25 160~400 BC337-40 BC338-40 250~630 J AD B K E CF 1Collector 2Base 3Emitter REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction, Storage Temperature BC337 BC338 BC337 BC338 VCBO VCEO VEBO IC PD TJ, TSTG 50 30 45 25 5 800 625 150, -55~150 Unit V V V mA mW °C http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente BC337 / BC338 NPN Plastic-Encapsulate Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown BC337 Voltage BC338 Collector to Emitter Breakdown BC337 Voltage BC338 Emitter to Base Breakdown Voltage Collector Cut-Off Current BC337 BC338 Collector Cut-Off Current BC337 BC338 Emitter Cut-Off Current DC Cu...




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