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BC338-16 Dataheets PDF



Part Number BC338-16
Manufacturers JCET
Logo JCET
Description NPN Transistor
Datasheet BC338-16 DatasheetBC338-16 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test condi.

  BC338-16   BC338-16


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 VCBO VCEO Ic= 100µA, IE=0 IC= 10 mA , IB=0 50 30 45 25 Emitter-base breakdown voltage Collector cut-off current Collector cut-off current BC337 BC338 BC337 BC338 Emitter cut-off current VEBO ICBO ICEO IEBO IE= 10µA, IC=0 VCB= 45 V, IE=0 VCB= 25V, IE=0 VCE= 40 V, IB=0 VCE= 20 V, IB=0 VEB= 4 V, IC=0 5 0.1 0.1 0.2 0.2 0.1 UNIT V V V V V µA µA µA µA µA DC curre.


BC338 BC338-16 BC338-25


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