MMBV3102LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio MMBV3102LT1 Motorola Preferred Device 22 pF (Nominal) 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE 3 Cathode 1 Anode 3 1 2 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) MAXIMUM RATINGS Rating Symbol Value Reverse Voltage Forward Current Device Dissipation @ TA = 25°C Derate above 25°C VR 30 IF 200 PD 225 1.8 Junction Temperature Storage Temperature Range TJ +125 Tstg –55 to +150 DEVICE MARKING MMBV3102LT1 = M4C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 µAdc) V(BR)R Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) IR Diode Cap...