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MBT3946DW1T1 Dataheets PDF



Part Number MBT3946DW1T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistor
Datasheet MBT3946DW1T1 DatasheetMBT3946DW1T1 Datasheet (PDF)

MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component.

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MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • Device Marking: MBT3946DW1T1 = 46 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish MAXIMUM RATINGS Rating Collector −Emitter Voltage (NPN) (PNP) Collector −Base Voltage (NPN) (PNP) Emitter −Base Voltage (NPN) (PNP) Collector Current − Continuous (NPN) (PNP) Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value 40 −40 60 −40 6.0 −5.0 200 −20.


MBT3946DW1T1 MBT3946DW1T1 MMBV3102LT1


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