MPQ3762

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor PNP Silicon 14 13 12 11 10 9 8 PNP 1234567 MPQ3762 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCBO VEBO IC –40 –40 –5.0 –1.5 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 750 5.98 1700 13.6 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.25 10 3.2 Watts 25.6 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance(1) Each Die Effective, 4 Die Junction to Case 100 39 Junction to Ambient 167 73.5 Unit °C/W °C/W Coupling Factors Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 46 5.0 56 10 % % ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHAR...