MMBV409LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package 31 Cathode Anode SOT–23 21 Cathode Anode TO–92 MAXIMUM RATINGS Rating Symbol MBV409 MMBV409LT1 Unit Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25°C Derate above 25°C VR 20 Vdc IF 200 mAdc PD 280 2.8 225 mW 1.8 mW/°C Junction Temperature Storage Temperature Range DEVICE MARKING TJ +125 Tstg –55 to +150 °C °C MMBV409LT1 = X5, MV409 = MV409 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vd...