MPSW56

RoHS MPSW56 MPSW56 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 1 W (Tamb=25℃) .,LCollector current ICM: -500 Collector-base voltage mA OV(BR)CBO: -80 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency WEJCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test conditions Ic=-100µA, IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 VCB=-60V, IE=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-250mA IC=-250mA, IB=-10mA VCE=-5V, IC=-250mA VCE=-5V, IC=-250mA VCB=-10V, IE=0, f=1MHz MIN TYP MAX UNIT -80 V -80 V -4 V -0.1 µA -0.1 ...