MPSW42
One Watt High Voltage Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Ratin...
MPSW42
One Watt High Voltage
Transistor
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation Derate above 25°C
@
TA
=
25°C
VCEO VCBO VEBO
IC PD
300 Vdc 300 Vdc 6.0 Vdc 500 mAdc 1.0 W 8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect dev...
