MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Complementary Pair Transistor
PNP/NPN Silicon
1 2 3 4 5 6 7 8
16 15 14 13 ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Complementary Pair
Transistor
PNP/
NPN Silicon
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
Total Power Dissipation @ TA = 25°C Derate above 25°C
Symbol VCEO VCB VEB
IC
PD
Value 40
Unit Vdc
40 Vdc
5.0 Vdc
200 mAdc
Each
Transistor
0.4 3.2
Four
Transistors Equal Power
0.72 6.4
Watts mW/°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
0.66 5.3
1.92 Watts 15.4 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitte...
