MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad General Purpose Transistors
PNP Silicon
MMPQ2907 MMPQ2907A
1 16 2 15 3 14 ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad General Purpose
Transistors
PNP Silicon
MMPQ2907 MMPQ2907A
1 16 2 15 3 14 4 13 5 12 6 11 7 10 89
MAXIMUM RATINGS
Rating
Symbol MMPQ2907 MMPQ2907A Unit
Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
VCEO VCB VEB
IC
–40 –60
–60
–5.0
–600
Each
Transistor
Four
Transistors Equal Power
Vdc Vdc Vdc mAdc
Total Power Dissipation @ TA = 25°C Derate above 25°C
PD
0.52 4.2
1.0 Watts 8.0 mW/°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
0.8 6.4
2.4 Watts 19.2 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0)
MMPQ2907 MMPQ2907A
Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (...