MPQ6842

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon 14 13 12 11 10 9 8 COMPLEMENTARY 1234567 TYPE B MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCBO VEBO IC 30 30 4.0 200 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc mAdc Total Device Dissipation @ TA = 25°C(1) Derate above 25°C PD 500 4.0 900 mW 7.2 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 825 6.7 2400 19.2 mW mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Junction to Case Junction to Ambient Unit Thermal Resistance Each Die 151 250 °C/W Effective, 4 Die 52 139 °C/W Coupling Factors Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 34 2.0 70 % 26 % ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min ...