MPQ2483

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPQ2483/D Quad Amplifier Transistors NPN Silicon 14 13 12 11 10 9 8 NPN 1234567 MPQ2483 MPQ2484* *Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCBO VEBO IC 40 60 6.0 50 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc mAdc Total Device Dissipation @ TA = 25°C(1) Derate above 25°C PD 500 4.0 900 mW 7.2 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 0.825 6.7 2.4 Watts 19.2 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Junction to Case Junction to Ambient Unit Thermal Resistance Each Die Effective, 4 Die 151 250 °C/W 52 134 °C/W Coupling Factors Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 34 2.0 70 % 26 % ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 — — v v1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; ...