Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL ...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL
TRANSISTORS
EBC
AMPLIFIER
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC
Derate Above 25ºC Operating And Storage Junction Temperature Range
THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air
SYMBOL VCEO VCBO VEBO IC PD
Tj, Tstg
Rth (j-c) Rth (j-a)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
VCEO VCBO VEBO ICBO hFE
VCE (sat) VBE (sat)
IC=10mA, IB=0
IC=10µA, IE=0 IE=10µA, IC=0 VCB=40V, IE=0,
VCB=40V, IE=0, Ta=60ºC
IC=10mA, VCE=1V MPS6530 MPS6531
IC=100mA, VCE=1V MPS6530 MPS65...