MPS6520

MPS6520 MPS6521 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS6520 and MPS6521 are silicon NPN epitaxial transistors designed for complementary amplifier applications requiring low noise and high DC current gains. The PNP complementary devices are MPS6522 and MPS6523 respectively. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 40 25 4.0 100 625 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=30V ICBO VCB=30V, TA=60°C BVCEO IC=500μA 25 BVEBO IE=10μA 4.0 VCE(SAT) IC=50mA, IB=5.0mA fT VCE=10V, IC=2.0mA 300 fT VCE=10V, IC=10mA 400 Cob VCB=10V, IE=0, f=100kHz NF VCE=5.0V, IC=10μA, RS=10KΩ, BW=15.7kHz, 3.0dB points @ 10Hz and 10kH...