2N4260 2N4261
2N4261 JAN, JTX AVAILABLE CASE 20, STYLE 10 TO-72
SWITCHING TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Ratin...
2N4260 2N4261
2N4261 JAN, JTX AVAILABLE CASE 20, STYLE 10 TO-72
SWITCHING
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol vCEO vCBO v EBO
"C
PD
TJ' Tst g
Value 15 15 4.5 30
200 1.14 -65 to +200
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ie = 0)
Collector-Base Breakdown Voltage (IC = 10 ,uAdc, Ie = 0)
Emitter-Base Breakdown Voltage (IE = 10 ,uAdc, lc = 0)
Collector Cutoff Current
(VCE = 10 Vdc, V B E(off) = 2.0 Vdc) (Vqe = 10 Vdc, V BE ( ff) = 2.0 Vdc, TA = 150°C) (VCE = 10 Vdc, VEB(on) - 0-4 Vdc)
Base Cutoff Current (VCE = 10 Vdc, VBE(off) = 2.0 Vdc)
ON CHARACTERISTICS
DC Current Gain dC = 1.0 mAdc, Vce = 1.0 Vdc) dC = 10 mAdc, V...