Document
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol 2N3467 2N3468
v CEO VCBO
40 40
50 50
VEBO
5.0
ic 1.0
PD 1.0
5.71
Pd TJ- Tstg
5.0 28.6
- 65 to + 200
Unit Vdc Vdc Vdc
Adc Watt mW/°C Watts mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Rwc
RftJA
Max
35 0.175
Unit °C/W
X/mW
2N3467 2N3468
JAN, JTX, JTXV AVAILABLE CASE 079-02, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageO) dC = 10 mAdc, Ib = 0)
2N3467 2N3468
Collector-Base Breakdown Voltage (IC = 10 /iAdc, Ig = 0)
2N3467 2N3468
Emitter-Base Breakd.