2N3307

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3307 2N3308 vCEO V CES VCBO 35 40 40 25 30 30 VEBO 'C PD 3.0 50 200 1.14 pd TJ. Tstg 300 1.71 - 65 to + 200 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C 2N3307 2N3308 CASE 20, STYLE 10 TO-72 (TO-206AF) GENERAL PURPOSE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage . (Ic = 2.0 mAdc, Bl = 0) 2N3307 2N3308 Collector-Emitter Breakdown Voltage c(l = 10 /xAdc, V B e = 0) 2N3307 2 N 3308 Collector-Base Breakdown Voltage! 1) dC = 10 fiAdc, Ie = 0) 2 N 3307 2 N 3308 Emitter-Base Breakdown Voltage (IE = 10/xAdc, Cl = 0) Collector Cutoff Current (Vcb ...