BC308

BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS BC307 BC308 50 30 45 25 5 100 500 150 - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at -VCB = 50 V at -VCB = 30 V BC307 BC308 Collector Emitter Breakdown Voltage BC307 at -IC = 2 mA BC308 Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Coll...