BC307…BC308
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Absolute Maximum Ratings (...
BC307…BC308
PNP Silicon Epitaxial Planar
Transistor
for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
1. Collector 2. Base 3. Emitter TO-92 Plastic Package
Symbol
-VCBO -VCEO -VEBO
-IC Ptot Tj TS
BC307 BC308 50 30 45 25 5 100 500 150 - 55 to + 150
Unit V V V mA
mW OC OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 2 mA
Current Gain Group A B
C
Collector Base Cutoff Current
at -VCB = 50 V at -VCB = 30 V
BC307 BC308
Collector Emitter Breakdown Voltage
BC307
at -IC = 2 mA
BC308
Emitter Base Breakdown Voltage at -IE = 100 µA
Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA
Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA
Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
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