BC307

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC307 BC308 BC309 Collector Emitter Voltage Collector Base Voltage VCEO VCBO 45 25 25 50 30 30 Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC VEBO IC PD 555 100 350 Derate Above 25ºC 2.8 Power Dissipation@ Tc=25ºC PD 1 Derate Above 25ºC 8 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 357 125 UNITS V V V mA mW mW/°C W mW/°C °C °C/W °C/W Continental Device India Limited Data Sheet Page 1 of 5 SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC...