Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL ...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL
TRANSISTORS
CB E
BC237,238, A,B,C BC239, B,C
TO-92 Plastic Package
For Lead Free Parts, Device Part # will be Prefixed with "T"
Amplifier
Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage Emitter Base Voltage
VCES VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction Temperature Range
Tj, Tstg
BC237 45 50 6.0
BC238 25 30 5.0
100 350
2.8 1.0
8.0
- 55 to +150
THERMAL RESISTANCE Junction to Ambient in free air Junction to Case
Rth (j-a) Rth (j-c)
357 125
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=2mA, IB=0
BC237
Emitter Base Voltage
VEBO
BC238/BC239 IE=10µA,...