Document
BC237...BC239
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
The transistor is subdivided into three groups, A, B, and C, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
1. Collector 2. Base 3. Emitter TO-92 Plastic Package
Symbol BC237 BC238 BC239
VCBO VCEO VEBO
IC Ptot
50 45 6
30 30 25 25
5 100 500
Tj 150
TS - 55 to + 150
Unit V V V mA
mW OC OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 2 mA
Current Gain Group A B
C
Collector Base Cutoff Current
at VCB = 50 V at VCB = 30 V
BC237 BC238, BC239
Collector Emitter Breakdown Voltage
BC237
at IC = 2 mA
BC238, BC239
Emitter Base Breakdown Voltage at IE = 100 µA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter S.