MHQ2906

MHQ2906 MHQ2907 MPQ2906* MPQ2907* MHQ2906, MHQ2907 CASE 632-02, STYLE 1 MPQ2906 MPQ2907 CASE 646-05, STYLE 1 TO-116 QUAD GENERAL PURPOSE TRANSISTOR PNP SILICON Refer to MD2904 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C MHQ2906, MHQ2907 MPQ29006, MPQ2907 Operating and Storage Junction Temperature Range MHO.2906,07 MPQ2906.07 Symbol VCEO VCBO VEBO "C PD Tj. Tstg Value 40 60 5.0 600 Each Transistor Total Device 0.65 1.9 3.72 6.5 10.88 19 - 65 to + 200 -55 to +125 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted. Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Emitter Breakdown VoltageO) (Iq = 10 mAdc, lg = 0) Collector-Base Breakdown Voltage dc = 10 /nAdc, Iff = 0) Emitter-Base Breakdown Voltage (If: = 10 /xAdc, \q = 0) Collector Cutoff Current (Vqb = 30 Vdc, Ie = 0) Emitter Cutoff Current (Vqb = ...