MMBT6427

NPN Transistors Darlington Amplifier * We declare that the material of product compliance with RoHS requirements. P b Lead(Pb)-Free MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C V alue 40 40 12 500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING MMBT6427 = 1V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 10 mAdc, V BE = 0) Collecto...