2N5179
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Applicable 1.0 to 2.0 mAdc
Collector-Base Voltage
Emitter-Base ...
2N5179
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Applicable 1.0 to 2.0 mAdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Total Device Dissipation (a T"a = 25°C
Derate above 25°C Total Device Dissipation (a Tc = 25°C
Derate above 25°C
Storage Temperature
Symbol vCEO
Value 12
Unit Vdc
vCBO v EBO
ic
PD
Pd
Tstg
20
2.5 50 200 1.14 300 1.71
-65 to +200
Vdc
Vdc
mAdc
mW
mW/°C
mW
mW/°C
°C
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage dC = 3.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage C(l = 0.001 mAdc, El = 0)
Emitter-Base Breakdown Voltage (lg = 0.01 mAdc, cl = 0)
Collector Cutoff Current
(VcB = 15 Vdc, Ie = 0) (Vqb = 15 Vdc, Ie = 0, Ta = 150°C) ON CHARACTERISTICS
DC Current Gain (lC = 3.0 mAdc, VC e = 1-0 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAdc, Ib = 1.0 mAdc)
Base-Emitt...