isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N5108
DESCRIPTION ·High Current-Gain Bandwidth Product
: fT= ...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2N5108
DESCRIPTION ·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose Class C amplifier applications
up to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
55
V
VCEO Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
Collector Power Dissipation @TC=25℃
PC Collector Power Dissipation @Ta=25℃
Tj
Junction Temperature
0.4
A
3.5 W
1.0
175
℃
Tstg
Storage Temperature Range
-55~175 ℃
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
INCHANGE Semiconductor
2N5108
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA
0.5
V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
0.1 mA
hFE
DC Current Gain
IC= 10mA; VCE= 10V
40
150
fT
Current-Gain—Bandwidth Product IC= 50mA;VCE= 10V;f= 200MHz 1200
MHz
COB
Output Capacitance
IE= 0;VCB= 28V; ftest= 1.0MHz
3.3 pF
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