2N4427
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON 4U
MAXIMUM RATINGS
Rating
Collector-E...
2N4427
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON 4U
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C Total Device Dissipation (& Tq = 25°C
Derate above 25°C
Storage Temperature
Symbol VCEO VCBO v EBO
>B ic
PD
Pd
Tstg
Value 20 40
2.0
400 400
1.0 5.71
3.5 20
-65 to +200
Unit Vdc Vdc Vdc
mAdc mAdc
Watt mW/°C Watts mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage dC = 5.0 mAdc, RgE = 10 ohms)
Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, Bl = 0)
Collector Cutoff Current
(Vce = 12 Vdc, Ib = 0)
Collector Cutoff Current
(VC e = 40 Vdc, Vbe = - 1.5 Vdc) (Vce = 12 Vdc, V BE = -1.5 Vdc, Tc = + 150°C)
Emitter Cutoff Current (V EB = 2.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, Vce = 5.0 V...