2N3960

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (§ TA = 25°C Derate above 25°C Total Device Dissipation <& Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO vEBO PD Pd TJ. Tstg Value 12 20 4.5 400 2.3 750 4.3 -65 to +200 Unit Vdc Vdc Vdc mW mW/°C mW mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol Rtuc R &JA Max 0.233 0.436 Unit °C/mW °C/mW 2N3959 2N3960 JAN, JTX, JTXV AVAILABLE CASE 22-03, STYLE 1 TO-18 (TO-206AA) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage OC = 10 mAdc, Bl = 0) Collector-Base Breakdown Voltage dC = 10 /jAdc, Ie = 0) Emitter-Base Breakdown Voltage (IE = 10 /xAdc, lc = 0) - -v (BR)CEO 12 Vdc — —v(BR)C...