MRF313
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The MRF313 is Designed for wide band Amplifier Applications up to 400 MH...
MRF313
NPN SILICON RF
TRANSISTOR
DESCRIPTION:
The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz.
FEATURES:
PG = 15 dB min. at 1.0 W/ 400 MHz Common Emitter for Improved Stability Omnigold™ Metalization System
MAXIMUM RATINGS
IC 150 mA
VCBO
40 V
VCEO
30 V
VEBO PDISS
TJ TSTG θJC
3.0 V 6.1 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC
28.5 OC/W
PACKAGE STYLE .200" 4L PILL
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 10 mA
BVCBO
IC = 0.1 mA
BVEBO
IE = 1.0 mA
ICEO
VE = 20 V
hFE VCE = 10 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
30 35 3.0
1.0 20 150
UNITS
V V V mA ---
COB
VCB = 28 V
f = 1.0 MHz
3.5 5.0 pF
PG ηC VCC = 28 V
POUT = 1.0 W
f = 400 MHz
15
16 45
dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A 1/1
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