MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tq = 25°C
Derate above 25°C Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol v CEO v CBO VEBO
c
PD
Tstg
Value 18 36 4.0 640
8.0 45.7
- 65 to + 200
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
°C
Symbol Rajc
Max
' 20
Unit °C/W
MRF237
CASE 79-03, STYLE 5 HIGH FREQUENCY
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage c(l = 10 mAdc, Bl = 0)
Collector-Emitter Breakdown Voltage c(l = 5.0 mAdc, Vbe = 0)
Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain dC = 250 mAdc, Vce = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance (Vcb = 15 Vdc, El = 0, f = 0.1 MHz)
FUNCTIONAL TEST (FIGURE 1)
C...
