MM8000 MM8001 MM8002
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
...
MM8000 MM8001 MM8002
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
@Total Device Dissipation Jq = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VCEO VCBO VEBO
"c
PD
Tj. Tstg
Value 30 40 3.5 0.4 3.5 20
- 65 to + 200
Unit Vdc Vdc Vdc Adc Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage dC = 5.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (IC = 0.1 mAdc, l£ = 0)
Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, lc = 0)
Collector Cutoff Current (VCE = 28 Vdc, Ib = 0)
ON CHARACTERISTICS
DC Current Gain C(l = 50 mAdc, VCE = 15 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(lC = 25 mAdc, Vqe = 15 Vdc, f = 200 MHz)
MM8000 MM8001 MM8002
(lC = 50 mAdc, V C E = 15 Vdc, f = 200 MHz)
MM8000...
