Document
MRF629
CASE 79-03, STYLE 5 HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Storage Temperature
Symbol v CEO VCBO VEBO
"c
PD
Tstg
Value 16 36 4.0 400 5.0 50
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
°C
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 50 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage C(l = 50 mAdc, V B e = 0)
Emitter-Base Breakdown Voltage E(l = 1.0 mAdc, Iq = 0)
Collector Cutoff Current (VC B = 15 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain (lC = 100 mAdc, Vce = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance (Vcb = 12.5 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURE 1)
Common-Emitter Amplifier Power Gain (Vcc = 12.5 Vdc, P ut = 2.0 W, f = 470 MHz)
Collector Efficiency
(VC .