MRF607

MRF607 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 16 Vdc Collector-Base Voltage VCBO 36 Vdc Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 75°C(1) Derate above 75°C VEBO 'C PD 4.0 0.33 3.5 28 Vdc Adc Watts mW/°C Storage Temperature T stg - 65 to + 200 °C (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as class B or C RF amplifiers. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 25 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage dC = 25 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 0.5 mAdc, Iq = 0) Collector Cutoff Current (Vqe = 10 Vdc, Ib = 0) ON CHARACTERISTICS DC Current Gain dC = 50 mAdc, VC e = 5.0 Vdc) SMALL SIGNAL CHARACTERISTICS Outpu...