BC182

BC182…BC184 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage BC182 BC183, BC184 BC182 BC183, BC184 Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Value 60 45 50 30 6 100 350 150 - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 10 µA at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 100 mA Collector Base Cutoff Current at VCB = 50 V at VCB = 30 V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Symbol BC182, BC183 BC184 BC182 BC183 BC184 BC182, BC183 BC184 hFE hFE hFE hFE hFE hFE hFE BC182 BC183, BC1...