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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC182, A, B BC183, A, B, C BC184, B, C
TO-92 Plastic Package
For Lead Free Parts, Device Part # will be Prefixed with "T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction Temperature Range
Tj, Tstg
BC182 50 60
BC183 30 45 6.0 100 350 2.8 1.0 8.0
- 55 to +150
THERMAL RESISTANCE Junction to Case Junction to Ambient in free air
Rth (j-c) Rth (j-a)
125 357
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=2mA, IB=0
BC182
Collector Base Voltage
VCBO
BC183/BC184 IC.