2N5086 2N5087
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
AMPLIFIER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Em...
2N5086 2N5087
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
AMPLIFIER
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol vCEO VCBO VEBO
ic
PD
Pd
Tj. Tstg
Value
Unit
50 Vdc
50 Vdc
3.0 Vdc
50 mAdc
350 mW
2.8 r mW/°C
1.0 Watt 8.0 mW/°C
-55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
. Max
Unit
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Rojc RfljAd)
125 357
''
°C/W °c/w
(1) R^jA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dC = 100 ixAdc, Ie...