2N4123

MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 30 25 40 30 5.0 200 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient RqJA 200 Thermal Resistance, Junction to Case RqJC 83.3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IE = 0) 2N4123 2N4124 Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) 2N4123 2N4124 Emitter – Base Breakdown Voltage (IE = 10...