MBM29LV016T-80

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20855-4E MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 s FEATURES Single 3.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as E2PROMs Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) Minimum 100,000 program/erase cycles High performance 80 ns maximum access time Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase Boot Code Sector Architecture T = Top sector B = Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded programTM Algorithms Automatically programs and verifies data at specified address Data Poll...