16M (2M x 8) BIT FLASH MEMORY
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20855-4E
MBM29LV016T-80/-90/-12/MBM29LV016B-8...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20855-4E
MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12
s FEATURES
Single 3.0 V read, program and erase Minimizes system level power requirements
Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
Minimum 100,000 program/erase cycles High performance
80 ns maximum access time Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase Boot Code Sector Architecture T = Top sector B = Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded programTM Algorithms Automatically programs and verifies data at specified address Data Poll...
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