4M (512K x 8) BIT FLASH MEMORY
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
4M (512K × 8) BIT
DS05-20864-3E
MBM29LV004TC-70/-90/-12/MBM29LV004B...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
4M (512K × 8) BIT
DS05-20864-3E
MBM29LV004TC-70/-90/-12/MBM29LV004BC-70/-90/-12
s FEATURES
Single 3.0 V read, program, and erase Minimizes system level power requirements
Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type) 40-pin SON (Package suffix: PNS)
Minimum 100,000 program/erase cycles High performance
70 ns maximum access time Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes Any combination of sectors can be concurrently erased. Also supports full chip erase Boot Code Sector Architecture T = Top sector B = Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM Algorithms Automatically writes and verifies data at specified addr...
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