8M (1M x 8/512K x 16) BIT FLASH MEMORY
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20841-4E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29F800TA-55/-70/-90/MBM...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20841-4E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
s FEATURES
www.DataSheet4U.com
Single 5.0 V read, write, and erase Minimizes system level power requirements
Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF)
Minimum 100,000 write/erase cycles High performance
55 ns maximum access time Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture T = Top sector B = Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM Algorithms Automatically writes and...
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