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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTORS
C44C8, C44C11
TO - 220 Plastic Package
Medium Power Switching and Amplifier Applications
Complementary C45C Series
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous
Peak * Base Current Continuous Power Dissipation TA=25ºC
TC=25ºC Operating & Storage Junction
Temperature Range
SYMBOL VCES VCEO VEBO IC ICM IB PD
Tj, Tstg
C44C8
C44C11
70 90
60 80
5
4
6
2
1.67
30
-55 to +150
Thermal Resistance Junction to Ambient Junction to Case
Rth (j-a) Rth (j-c)
75 4.2
ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector- Emitter Sustaing Voltage
Collector Cut off Current Emitter Cut off Current DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
VCEO(sus)* IC=1.