4M (512K x 8/256K x 16) BIT
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20866-2E
FLASH MEMORY
CMOS
4M (512K × 8/256K × 16) BIT
MBM29DL400TC-55/-70/-90/...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20866-2E
FLASH MEMORY
CMOS
4M (512K × 8/256K × 16) BIT
MBM29DL400TC-55/-70/-90/-12/MBM29DL400BC-55/-70/-90/-12
s FEATURES
Single 3.0 V read, program, and erase Minimizes system level power requirements
Simultaneous operations Read-while-Erase or Read-while-Program
Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV400TC/BC) 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
Minimum 100,000 program/erase cycles High performance
55 ns maximum access time Sector erase architecture
Two 16K byte, four 8K bytes, two 32K byte, and six 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture T = Top sector B = Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any se...
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