16M (2M x 8/1M x 16) BIT FLASH MEMORY
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20872-1E
PAGE MODE FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29PL160TD-75/-...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20872-1E
PAGE MODE FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29PL160TD-75/-90/MBM29PL160BD-75/-90
s FEATURES
Single 3.0 V read, program and erase Minimizes system level power requirements
Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
Compatible with MASK ROM pinouts 48-pin TSOP (I) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type) 44-pin SOP (Package suffix: PF)
Minimum 100,000 program/erase cycles High performance
25 ns maximum page access time (75ns maximum random access time) An 8 words page read mode function Sector erase architecture
One 8K word, two 4K words, one 112K word, and seven 128K words sectors in word mode One 16K byte, two 8K bytes, one 224K byte, and seven 256K bytes sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase Boot Code Sector Architecture T = Top sector B = Bottom sector Embedd...
Similar Datasheet