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MMBT2222A

Infineon

NPN Silicon Switching Transistor

NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A ...


Infineon

MMBT2222A

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Description
NPN Silicon Switching Transistor Low collector-emitter saturation voltage Complementary type: SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT2222A/MMBT2222A 32 1 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 77 °C Junction temperature Storage temperature VCEO VCBO VEBO IC Ptot Tj Tstg 40 75 6 600 330 150 -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 220 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-08-19 SMBT2222A/MMBT2222A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakd...




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